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Michael J Aziz 
Michael  J  Aziz 

Michael  J  Aziz , Harvard University  

Address: Gordon McKay Laboratory Harvard University 
City: Cambridge 
State: MA 
Zip: 02138 
Country: USA 
Telephone: (617) 495-9884 
Fax: (617) 495-9837 
Email: aziz@deas.harvard.edu 
Related Website:
http://www.deas.harvard.edu/matsci/people/aziz/aziz.html 
Publications:
153. C.B. Arnold and M.J. Aziz, "Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach", Materials Research Society Symposia Proceedings749, W14.3 (2003). 152. J.M. Warrender and M.J. Aziz, “Evolution of Ag Nanocrystal Films Grown by Pulsed Laser Deposition”, accepted for publication in Applied Physics A. 151. W. Barvosa-Carter, M.J. Aziz, A.-V. Phan, T. Kaplan and L.J. Gray, "Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects ", submitted. 150. M.J. Aziz, “Tests of Theories for Nonplanar Growth During Rapid Alloy Solidification”, in Solidification Processes and Microstructures : a Symposium in Honor to Wiflried Kurz, Eds. M. Rappaz et al. (TMS, Warrendale, PA), in press (2004). 149. K.M. Yu, W. Walukiewicz, M.A. Scarpulla, O.D. Dubon, J. Wu, J. Jasinski, Z. Liliental-Weber, J.W. Beeman, M.R. Pillai and M.J. Aziz, “Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs”, Journal of Applied Physics94, 1043 (2003). 148. C.H. Crouch, J.E. Carey, J.M. Warrender, M.J. Aziz, and E. Mazur, "Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon", accepted for publication in Applied Physics Letters. 147. M.J. Aziz,."Dopant Diffusion under Pressure and Stress", in Proceedings of 2003 International Conference on Simulation of Semiconductor Processes and Devices, Cambridge MA, September 2003. 146. D. Margetis, M.J. Aziz, and H.A. Stone, "Continuum Description of Profile Scaling in Nanostructure Decay", accepted for publication in Physical Review B; http://www.arxiv.org/abs/cond-mat/0306085 . 145. W. Zhou, A. Cuenat and M.J. Aziz, "Formation of Self-organized Nanostructures on Ge During Focused Ion Beam Sputtering", in Microscopy of Semiconducting Materials 2003: Proceedings of the 13th International Conference on Microscopy of Semiconducting Materials, eds. A. G. Cullis and P. A. Midgley (Institute of Physics and IOP Publishing Limited, 2003). 144. E. Chason and M.J. Aziz, "Spontaneous Formation of Patterns on Sputtered Surfaces" Scripta Materialia 49, 953 (2003). 143. J.M. Warrender and M.J. Aziz, “Morphological Evolution of Ag/Mica Films Grown by Pulsed Laser Deposition”, Materials Research Society Symposium Proceedings 749, W.3.1 (2003). 142. J.P. Leonard, B. Shin, J.W. McCamy, and M.J. Aziz, “Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE”, Materials Research Society Symposium Proceedings749, W16.11 (2003). 141. M.A. Scarpulla, O.D. Dubon, K.M. Yu, O. Monteiro, M. Pillai, M.J. Aziz, and M.C. Ridgway, "Ferromagnetic Ga1-xMnxAs Films Produced by Ion Implantation and Pulsed Laser Melting", Applied Physics Letters 82, 1251 (2003). 140. K.M. Yu, W. Walukiewicz, J.W. Beeman, M.A. Scarpulla, O.D. Dubon, M.R. Pillai and M.J. Aziz, "Enhanced Nitrogen Incorporation by Pulsed Laser Melting of GaNxAs1-x Formed by N Implantation", Applied Physics Letters 80, 3958 (2002). 

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