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Nanoparticle Report

Silicon Nanoparticle 
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Element 1: Silicon
Structure: Nano Wires
Origin: Chemical Synthesis
PPMD: 7  nm
Added to NIL: 8/16/2005 10:52:00 AM
Contributor: Jack (John)   Fischer  ,   University of Pennsylvania 

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Research Abstract:
Laser ablation has been used to grow silicon nanowires with an average diameterof 6.7 nm + 2.7 nm surrounded by an amorphous SiOx sheath of 1-2 nm. This paperreports the imaging, chemical and structural analysis of these wires. Due to the growthtemperature and the presence of calcium impurities more info

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Related Publications:
4. “Charge transfer and Fermi level shift in p-doped single-walled carbon nanotubes”, W. Zhou, J. Vavro, N. M. Nemes, J. E. Fischer, F. Borondics and K. Kamaràs, Phys. Rev. B 71, 205423 (2005). 6. “Focused Ion Beam Platinum Nanopatterning for GaN Nanowires: Ohmic Contacts and Patterned Growth”, C.Y. Nam, J.Y. Kim, J.E. Fischer, Appl. Phys. Letters 86, 193112 (2005) 7. “Metal-insulator transition in doped single-wall carbon nanotubes”, J. Vavro, J. M. Kikkawa and J. E. Fischer, Phys. Rev. B more info
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