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| Element 1: | Silicon |
| Structure: | Other |
| Origin: | Other |
| PPMD: | 50 nm |
| SSA: | 90 m2/gm |
| Added to NIL: | 5/22/2007 12:42:00 PM |
Related Website:
http://www.nabond.com/Nano_SiC.htm
Research Abstract:
The structure devices, made by using this nano SiC powder, have high hardness, high wear resistance and good self-greasing effect, high thermal conductivity, low thermal expansion efficient and high temperature strength etc. SiC also is one kind of semiconductors with good properties. Both chemical 
Related Publications:
Private Company
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