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Element 1: Gallium
Element 2: Arsenic
Structure: Nano Wires
Origin: Chemical Synthesis
PPMD: 400  nm
Added to NIL: 7/20/2005 7:53:00 AM
Contributor: William   E.   Buhro  ,   Washington University 

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Research Abstract:
Until now, micrometer-scale or larger crystals of the II-V semiconductors have not been grown at low temperatures for lack of suitable crystallization mechanisms for highlycovalent nonmolecular solids. A solution-liquid-solid mechanism for the growth of InP,InAs, and GaAs is described that uses more info

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T. J. Trentler, K. M. Hickman, S. C. Goel, A.M. Viano, P. C. Gibbons, andW. E. Buhro, Solution-liquid-solid growth of crystalline III-V semiconductors: An analogy to Solid-solid growth, Science 270, p. 1791, 1995. 


P.D. Markowitz, M.P. Zach, P.D. Gibbons, R.M. Penner, and W. E. Buhro*, Phase Separation in AlxGa1-xAs Nanowhiskers Grown by the Solution-Liquid-Solid Mechanism, J. Am. Chem. Soc., 123 (2001) 4502.  

Related Publications:
Hollingsworth, J.A.; Poojary, D.M.; Clearfield, A.; Buhro, W.E. J. Am. Chem. Soc. 2000 , 122 , 3562-3563. “Catalyzed Growth of a Metastable InS Crystal Structure as Colloidal Crystals”. • Dingman, S.D.; Rath, N.P.; Gibbons, P.C.; Buhro, W.E. Angew. Chem. Int. Ed. 2000 , 39 , 1470-1472. “Low-temperature, Catalyzed Growth of Indium Nitride Fibers from Azido-indium Precursors”. • Haber, J.A.; Gunda, N.V.; Balbach, J.J.; Conradi, M.S., Buhro, W.E. Chem. Mater. 2000 , 12 , 973-982. “Chemical Syntheses more info
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