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Related Website:
http://www-unix.oit.umass.edu/~tuominen/NewFiles/High81_NIRT_Minnesota.pdf
Research Abstract:
Researchers at the University of Minnesota have developed new techniques for producing, localizing, and integrating into transistor-like structures, single crystal cubes of silicon that are tens of nanometers on a side. Until this development, integrated circuits have been built using a single 
Additional Particle Information
“Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma,” Ameya Bapat, Christopher R. Perrey, Stephen A. Campbell, C. Barry Carter, and Uwe Kortshagen, J. Appl. Phys. 94, 1969-1974 (2003).
Related Publications:
S. A. Campbell, The Science and Technology of Microelectronic Fabrication, Oxford, 1996. "A Critical Review - The Epitaxial Growth of Semiconductors By Rapid Thermal Chemical Vapor Deposition" accepted for publication, Materials Research Reviews. "Particle Beam Mass Spectrometer Measurements of Particle Formation During LPCVD of Polysilicon and SiO2 Films", P. H. McMurry, S. Nijhawan, N. Rao, P. Ziemann, S. A. Campbell, and D. B. Kittleson, submitted to J. Vac. Sci. and Techn. "Structural and
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