Researchers at the University of Minnesota have developed new techniques for producing, localizing, and integrating into transistor-like structures, single crystal cubes of silicon that are tens of nanometers on a side. Until this development, integrated circuits have been built using a single
Additional Particle Information
“Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma,” Ameya Bapat, Christopher R. Perrey, Stephen A. Campbell, C. Barry Carter, and Uwe Kortshagen, J. Appl. Phys. 94, 1969-1974 (2003).
S. A. Campbell, The Science and Technology of Microelectronic Fabrication, Oxford, 1996. "A Critical Review - The Epitaxial Growth of Semiconductors By Rapid Thermal Chemical Vapor Deposition" accepted for publication, Materials Research Reviews. "Particle Beam Mass Spectrometer Measurements of Particle Formation During LPCVD of Polysilicon and SiO2 Films", P. H. McMurry, S. Nijhawan, N. Rao, P. Ziemann, S. A. Campbell, and D. B. Kittleson, submitted to J. Vac. Sci. and Techn. "Structural and Electrical Characterization of TiO2 Grown from Titanium Tetrakis-isopropoxide (TTIP) and TTIP/H2O Ambients", J. Yan, D. C. Gilmer, S. A. Campbell, and W. L. Gladfelter, accepted for publication, J. Vac. Sci. Techn. B "Semi-Insulating Silicon", S. A. Campbell and J. Meyer, Proceedings of the 1995 Silicon on Insulator Workshop, IEEE (1995). “Synthesis of Crystalline Silicon Nanoparticles in Low-Pressure Inductive Plasmas” A. Bapat, U. Kortshagen, S.A. Campbell, C.R. Perrey, C.B. Carter, Mat. Res. Soc. Proc. 2003. “Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure inductively coupled plasma” A. Bapat, C.R. Perrey, S.A. Campbell, C.B. Carter, and U. Kortshagen, J. Appl. Phys. 94(3), 1969-1974 (2003).